A 50-100 GHz ohmic contact SPDT RF MEMS silicon switch with dual axis movement
Por:
Sim, SM, Lee, Y, Jang, YH, Lee, YS, Kim, YK, Llamas-Garro, I, Kim, JM
Publicada:
1 ene 2016
Resumen:
We firstly show the prototype of an ohmic contact Single-Pole Double-Throw Radio Frequency Micro-Electro-Mechanical Systems (SPDT RF MEMS) switch operating at 50-100 GHz. The fabricated ohmic contact SPDT RF MEMS silicon switch moves both laterally and vertically, to improve the isolation at high frequencies by initially misaligning the contact part of the switch over a Coplanar Waveguide (CPW) transmission line. The lateral and vertical movement of the switch is operated by using comb and parallel plate actuators, respectively. The proposed switch was fabricated using Silicon-On-Glass (SiOG) bonding process. The insertion loss of the fabricated switch is measured according to the different operation states of the switch, in the range from 50 to 100 GHz. The fabricated length of the transmission line is 4.6 mm and the measured insertion loss and isolation are 9.13 dB and 24.37 dB at 70 GHz, respectively. © 2016 Elsevier B.V.
Filiaciones:
Sim, SM:
Chonbuk Natl Univ, Sch Elect & Informat Engn, Jeonju 54896, South Korea
Lee, Y:
Chonbuk Natl Univ, Sch Elect & Informat Engn, Jeonju 54896, South Korea
Seoul Natl Univ, Dept Elect & Comp Engn, Seoul, South Korea
Jang, YH:
Seoul Natl Univ, Dept Elect & Comp Engn, Seoul, South Korea
Lee, YS:
Seoul Natl Univ, Dept Elect & Comp Engn, Seoul, South Korea
Kim, YK:
Seoul Natl Univ, Dept Elect & Comp Engn, Seoul, South Korea
Llamas-Garro, I:
Ctr Tecnol Telecomunicac Catalunya, Castelldefels 08860, Spain
Kim, JM:
Chonbuk Natl Univ, Div Elect Engn, Jeonju 54896, South Korea
Green Submitted, All Open Access; Green Open Access
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