Silicon-on-quartz bonding based SPR chip
Por:
Lee Y., Sim S.-M., Fontana E., Llamas-Garro I., Cavalcanti G.O., Kim J.-M.
Publicada:
1 jun 2017
Resumen:
In this paper, an Otto coupling configuration based SPR chip is designed, simulated and fabricated using a silicon-on-quartz (SoQ) bonding process. The simulation of the SPR effect is conducted using COMSOL Multiphysics simulator (Altsoft Co.) using the designed chip dimensions, the optical constants are interpolated from data available in the literature. The size of the fabricated SPR chip is . Resonance angle and reflectance are measured to be 42.19A degrees and 0.411A degrees, respectively, using an automated reflectometer. Discrepancy between measurement and simulation results is discussed by optical constant of the gold layer used as a thin metal film. The SoQ bonding process is a feasible approach for implementation of Otto coupling configuration based SPR chips.
Filiaciones:
Lee Y.:
School of Electronic and Information Engineering, Chonbuk National University, Jeonju, 561-756, South Korea
Sim S.-M.:
School of Electronic and Information Engineering, Chonbuk National University, Jeonju, 561-756, South Korea
Fontana E.:
Departmento de Eletrônica e Sistemas, Universidade Federal de Pernambuco, Recife, 50740-550, Brazil
Llamas-Garro I.:
Centre Tecnològic de Telecomunicacions de Catalunya, Castelldefels, 08860, Spain
Cavalcanti G.O.:
Escola Politécnica, Universidade de Pernambuco, Recife, 50740-550, Brazil
Kim J.-M.:
Division of Electronic Engineering, Chonbuk National University, Jeonju, 561-756, South Korea
Green Submitted, All Open Access; Green Open Access
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